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Quartz components that can be used in high and low temperature areas of semiconductor processes, such as quartz flanges, quartz rings, quartz boats, etc
OH≤30ppm， Has extremely high thermal stability. High purity and low bubble rate, avoiding particle generation during plasma etching, high-temperature oxidation and other processes, improving semiconductor process yield.
Typical trace impurity content(ppm)
| Impurity content | AI | B | Like | Co | Cr | With | Fe | K | Li | Mg | Mn | Na | Ni | Ti | OH |
| YE-3234 | ≤13 | ≤0.1 | ≤1.0 | ≤0.006 | ≤0.03 | ≤0.5 | ≤1.0 | ≤0.9 | ≤0.5 | ≤0.62 | ≤0.06 | ≤1.0 | ≤0.27 | ≤2.2 | ≤20 |
Product Features
| product | model | Typical dimensions (mm) | application area | Product Features |
| Fused quartz ingot | YE-3234 | φ1900×H500 | Semiconductors, photovoltaics Industry, etc | High purity, OH content and gas Low foaming rate and good high temperature resistance |
Optical Transmittance Performance
Mechanical/Thermal Properties
| parameter | Company | Electric fused quartz | parameter | Company | Electric fused quartz YE series |
density | g/cmthree | two point two | |||
| Mohs hardness | - | 6~7 | Strain point (η=1014.5dPa · s) | °C | one thousand and one hundred |
| Young's modulus | GPa | seventy | Annealing point (η=1013dPa · s) | °C | one thousand two hundred and ten |
| shear modulus | GPa | thirty | Softening point (η=107.6kPa · s) | °C | one thousand seven hundred and twenty |
| Poisson's ratio | - | zero point one seven | Coefficient of thermal expansion | ||
| compressive strength | GPa | 1.13 | 20~100°C | ×10-6/°C | zero point four nine |
| tensile strength | MPa | forty-nine | 20~thirty0°C | ×10-6/°C | zero point five five |
| bending strength | MPa | ninety-four | 20~600°C | ×10-6/°C | zero point five four |
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